UCC27221
UCC27221 is High-Efficiency Predictive Synchronous Buck Driver manufactured by Texas Instruments.
FEATURES
APPLICATIONS
D Maximizes Efficiency by Minimizing
Body-Diode Conduction and Reverse Recovery Losses
D Transparent Synchronous Buck Gate Drive
Operation From the Single Ended PWM Input Signal
D 12-V or 5-V Input Operation D 3.3-V Input Operation With Availability of
12-V Bus Bias
D On-Board 6.5-V Gate Drive Regulator D ±3.3-A True Drive Gate Drives for High
Current Delivery at MOSFET Miller Thresholds
D Automatically Adjusts for Changing
Operating Conditions
D Thermally Enhanced 14-Pin Power PAD
HTSSOP Package Minimizes Board Area and Junction Temperature Rise
FUNCTIONAL APPLICATION DIAGRAM
D Non-Isolated Single or Multi-phased
DC-to-DC Converters for Processor Power, General puter, Tele and Data Applications
DESCRIPTION
The UCC27221 and UCC27222 are high-speed synchronous buck drivers for today’s high-efficiency, lower-output voltage designs. Using Predictive Gate Drivet (PGD) control technology, these drivers reduce diode conduction and reverse recovery losses in the synchronous rectifier MOSFET(s). The UCC27221 has an inverted PWM input while the UCC27222 has a non-inverting PWM input.
Predictive Gate Drivet technology uses control loops which are stabilized internally and are therefore transparent to the user. These loops use no external ponents, so no additional design is needed to take advantage of the higher efficiency of these drivers.
VIN PWMIN
UCC27222 7 IN VHI 14 6,8 GND G1 13
3 VDD SW 11,12
4,5 VLO G2 9,10
VOUT
This closed loop feedback system detects body-diode conduction, and adjusts deadtime delays to minimize the conduction time interval. This virtually eliminates body-diode conduction while adjusting for temperature, load- dependent delays, and for different MOSFETs. Precise gate timing at the nanosecond level reduces the reverse recovery time of the synchronous rectifier MOSFET body-diode, reducing reverse recovery losses seen in the main (high-side) MOSFET. The lower junction temperature in the low-side MOSFET increases product...